Title :
Graphene Interconnect Lifetime: A Reliability Analysis
Author :
Chen, Xiangyu ; Seo, David H. ; Seo, Sunae ; Chung, Hyunjong ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Understanding the breakdown current density is not enough for establishing the reliability performance of graphene interconnects. It is more important to know how graphene wires degrade with time under constant current stress and how that compares with conventional interconnects. This letter investigates the lifetime of graphene interconnect under constant high current stress. Under a stress current density of 20 MA/cm2 at 250°C exposed to air, the mean time to fail of a 3-μm-wide 100-μm-long graphene interconnect is approximately 6 h, slightly worse than the extrapolated electromigration lifetime of a copper interconnect capped with CoWP at the same stress current density. Raman study shows that the interconnect failure is mainly caused by defect formation due to graphene oxidation. This suggests that optimizing the capping material for graphene interconnect will substantially improve the reliability lifetime of graphene interconnects.
Keywords :
Raman spectra; copper; current density; electromigration; failure analysis; graphene; interconnections; oxidation; reliability; stress analysis; C; Cu; Raman study; breakdown current density; capping material; constant current stress; defect formation; extrapolated electromigration lifetime; graphene interconnect lifetime; graphene oxidation; graphene wires; interconnect failure; reliability analysis; size 100 mum; size 3 mum; stress current density; temperature 250 degC; Current density; Electric breakdown; Graphene; Integrated circuit interconnections; Reliability; Wires; Graphene; interconnect; lifetime; reliability; wires;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2211564