• DocumentCode
    1284550
  • Title

    Graphene Interconnect Lifetime: A Reliability Analysis

  • Author

    Chen, Xiangyu ; Seo, David H. ; Seo, Sunae ; Chung, Hyunjong ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    33
  • Issue
    11
  • fYear
    2012
  • Firstpage
    1604
  • Lastpage
    1606
  • Abstract
    Understanding the breakdown current density is not enough for establishing the reliability performance of graphene interconnects. It is more important to know how graphene wires degrade with time under constant current stress and how that compares with conventional interconnects. This letter investigates the lifetime of graphene interconnect under constant high current stress. Under a stress current density of 20 MA/cm2 at 250°C exposed to air, the mean time to fail of a 3-μm-wide 100-μm-long graphene interconnect is approximately 6 h, slightly worse than the extrapolated electromigration lifetime of a copper interconnect capped with CoWP at the same stress current density. Raman study shows that the interconnect failure is mainly caused by defect formation due to graphene oxidation. This suggests that optimizing the capping material for graphene interconnect will substantially improve the reliability lifetime of graphene interconnects.
  • Keywords
    Raman spectra; copper; current density; electromigration; failure analysis; graphene; interconnections; oxidation; reliability; stress analysis; C; Cu; Raman study; breakdown current density; capping material; constant current stress; defect formation; extrapolated electromigration lifetime; graphene interconnect lifetime; graphene oxidation; graphene wires; interconnect failure; reliability analysis; size 100 mum; size 3 mum; stress current density; temperature 250 degC; Current density; Electric breakdown; Graphene; Integrated circuit interconnections; Reliability; Wires; Graphene; interconnect; lifetime; reliability; wires;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2211564
  • Filename
    6302166