DocumentCode
1284570
Title
Investigation of One-Dimensional Thickness Scaling on 
Resistive Switching Device Performance
Author
Wang, Ming ; Hangbing Lv ; Qi Liu ; Yingtao Li ; Zhongguang Xu ; Shibing Long ; Hongwei Xie ; Kangwei Zhang ; Xiaoyu Liu ; Haitao Sun ; Xiaoyi Yang ; Ming Liu
Author_Institution
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
Volume
33
Issue
11
fYear
2012
Firstpage
1556
Lastpage
1558
Abstract
Scaling is a key issue for resistive switching (RS) memory before commercialization. In this letter, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaled. Serious deterioration of on/off ratio and device yield was observed when the material thickness scaled below 3 nm. A new method of two-step electrode deposition accompanied with reoxidization process was employed to overcome this problem. Significant improvements of device performance such as forming free, low RESET current (~1 μA), high on/off ratio (>; 100) and 100% device yield were achieved thereafter.
Keywords
copper; diffusion; electrochemical electrodes; hafnium compounds; platinum; random-access storage; Cu-HfOx-Pt; RS memory; electrode diffusion; low RESET current; one-dimensional thickness scaling; reoxidization process; resistive switching device performance; resistive switching memory; two-step electrode deposition; Copper; Electrodes; Hafnium compounds; Performance evaluation; Resistance; Switches; $hbox{HfO}_{x}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2211563
Filename
6302169
Link To Document