Title :
Frequency response of an internal amplifier in a high-speed integrated circuit measured by electro-optic sampling
Author :
Wiesenfeld, J.M.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ
fDate :
1/21/1988 12:00:00 AM
Abstract :
The frequency response of an FET amplifier within a high-speed GaAs integrated circuit has been measured directly using ultrashort optical pulses from a gain-switched GaInAsP injection laser and the electro-optic sampling technique. The 3 dB bandwidth for the FET amplifier is 4-4.5 GHz
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated circuit testing; measurement by laser beam; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; semiconductor junction lasers; 4 to 4.5 GHz; FET amplifier; GaAs integrated circuit; GaInAsP laser; electro-optic sampling; electro-optic sampling technique; frequency response; gain-switched GaInAsP injection laser; internal amplifier; semiconductors; ultrashort optical pulses;
Journal_Title :
Electronics Letters
