Title :
Operation of a resistive-gate MESFET oscillator in the single-domain transit-time mode
Author :
Yin, Yiwen ; Fu, Hua, Jr. ; Cooper, James A. ; Balzan, Matthew L. ; Geissberger, Arthur E.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Resistive-gate (RG) MESFET oscillators having gate sheet resistance of 30 k Omega /sq are operated in the single-domain transit-time mode. Frequencies from 6 to 28 GHz are observed, inversely proportional to channel length. Unlike a lateral Gunn diode, operation is essentially independent of drain-to-source voltage, indicating that channel conditions are controlled by the potential drop along the resistive gate. The authors conclude that contiguous domains cannot form in the channel unless the gate sheet resistance is reduced to about 3 k Omega /sq.<>
Keywords :
Schottky gate field effect transistors; microwave oscillators; solid-state microwave devices; transit time devices; 6 to 28 GHz; gate sheet resistance; independent of drain-to-source voltage; operation; resistive-gate MESFET oscillator; single-domain transit-time mode; Avalanche breakdown; Doping; Frequency; Gallium arsenide; MESFET integrated circuits; MODFET integrated circuits; Microwave devices; Microwave oscillators; Roentgenium; Voltage;
Journal_Title :
Electron Device Letters, IEEE
