Device sensitivity of field-plated polysilicon high-voltage TFTs and their application to low-voltage operation

Author

Huang, Tiao-Yuan ; Wu, I-Wei ; Lewis, Alan G. ; Chiang, Anne ; Bruce, Richard H.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

11

Issue

11

fYear

1990

Firstpage

541

Lastpage

543

Abstract

The device sensitivity to the offset length variations in the recently proposed field-plated (FP) polysilicon high-voltage thin-film transistor (HVTFT) has been studied. The device characteristics of the new FP-HVTFTs are found to be much more immune to misalignment errors; this is a very desirable feature, especially for large-area applications. FP-HVTFTs also exhibit lower leakage current than their conventional counterparts for up to 100-V operation. At typical low-voltage operation (e.g. 20 V), an improvement of about three orders of magnitude in the on/off current ratio can be readily achieved. These features, together with the simpler processing and improved turn-on characteristics reported earlier, make the FP-TFT a very promising device architecture for large-area microelectronics.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; leakage currents; semiconductor technology; silicon; thin film transistors; 100 V; 100-V operation; 20 V; FP-HVTFTs; application; device characteristics; device sensitivity; field plated high-voltage thin-film transistors; immune to misalignment errors; improved turn-on characteristics; large-area applications; large-area microelectronics; leakage current; low-voltage operation; offset length variations; on/off current ratio; polycrystalline Si; simpler processing; Dielectric substrates; Fabrication; Implants; Leakage current; Microelectronics; Polymer films; Printers; Thin film devices; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63026

Filename

63026