Title :
Device sensitivity of field-plated polysilicon high-voltage TFTs and their application to low-voltage operation
Author :
Huang, Tiao-Yuan ; Wu, I-Wei ; Lewis, Alan G. ; Chiang, Anne ; Bruce, Richard H.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
The device sensitivity to the offset length variations in the recently proposed field-plated (FP) polysilicon high-voltage thin-film transistor (HVTFT) has been studied. The device characteristics of the new FP-HVTFTs are found to be much more immune to misalignment errors; this is a very desirable feature, especially for large-area applications. FP-HVTFTs also exhibit lower leakage current than their conventional counterparts for up to 100-V operation. At typical low-voltage operation (e.g. 20 V), an improvement of about three orders of magnitude in the on/off current ratio can be readily achieved. These features, together with the simpler processing and improved turn-on characteristics reported earlier, make the FP-TFT a very promising device architecture for large-area microelectronics.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; leakage currents; semiconductor technology; silicon; thin film transistors; 100 V; 100-V operation; 20 V; FP-HVTFTs; application; device characteristics; device sensitivity; field plated high-voltage thin-film transistors; immune to misalignment errors; improved turn-on characteristics; large-area applications; large-area microelectronics; leakage current; low-voltage operation; offset length variations; on/off current ratio; polycrystalline Si; simpler processing; Dielectric substrates; Fabrication; Implants; Leakage current; Microelectronics; Polymer films; Printers; Thin film devices; Thin film transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
