Title :
Gate-resistance-limited switching frequencies of power MOSFETs
Author_Institution :
General. Electric Co., Schenectady, NY, USA
Abstract :
High-frequency switching limitation of a power MOSFET resulting from large gate resistance is studied. It is shown that a maximum gate switching frequency can be identified to minimize resistive power dissipation in the gate. Power MOSFETs with refractory silicide gates are shown to result in more than a fivefold improvement in this frequency compared to conventional heavily POCl/sub 3/-doped polysilicon-gated MOSFETs with metal gate runners.<>
Keywords :
insulated gate field effect transistors; metallisation; power transistors; semiconductor device models; gate resistance limited switching frequency; maximum gate switching frequency; metal gate runners; minimize resistive power dissipation; polycide gate; polysilicon-gated MOSFETs; power MOSFETs; refractory silicide gates; switching frequency limitation; Area measurement; Capacitance; Electrical resistance measurement; MOSFETs; Power conversion; Power dissipation; Power measurement; Power systems; Silicides; Switching frequency;
Journal_Title :
Electron Device Letters, IEEE
