Title :
Comments on "Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection" [and reply]
Author :
Ledentsov, Nikolay N. ; Kirstaedter, N. ; Bimberg, Dieter ; Brueck, Steven R. J. ; Sandusky, J.V.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Discusses InGaAs-GaAs quantum dot injection lasing by a commentor and the original authors reply to this comment.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; self-adjusting systems; semiconductor quantum dots; In/sub 0.5/Ga/sub 0.5/As quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dot injection lasing; current injection; self-organized; three-dimensionally quantum-confined sublevel; Electroluminescence; Indium gallium arsenide; Laser stability; Luminescence; Photoluminescence; Quantum dot lasers; Quantum dots; Stationary state; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
