Title :
9.3 W CW (In)AlGaAs 100 μm wide lasers at 970 nm
Author :
O´Brien, S. ; Zhao, H. ; Schoenfelder, A. ; Lang, R.J.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
10/23/1997 12:00:00 AM
Abstract :
Wide aperture lasers have been fabricated which produce a record maximum power of 9.3 W CW at 970 nm. This record power is achieved with (In)AlGaAs-based materials using relatively short cavity lengths and standard mounting onto copper heatsinks. Detailed measurements of the emitted far field pattern in both the fast and slow axes have been made up to 6 W CW power level
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; 9.3 W; 970 nm; AlGaAs; CW wide aperture laser; InAlGaAs; cavity length; copper heatsink; field pattern; maximum power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971234
