DocumentCode
1285181
Title
9.3 W CW (In)AlGaAs 100 μm wide lasers at 970 nm
Author
O´Brien, S. ; Zhao, H. ; Schoenfelder, A. ; Lang, R.J.
Author_Institution
SDL Inc., San Jose, CA, USA
Volume
33
Issue
22
fYear
1997
fDate
10/23/1997 12:00:00 AM
Firstpage
1869
Lastpage
1871
Abstract
Wide aperture lasers have been fabricated which produce a record maximum power of 9.3 W CW at 970 nm. This record power is achieved with (In)AlGaAs-based materials using relatively short cavity lengths and standard mounting onto copper heatsinks. Detailed measurements of the emitted far field pattern in both the fast and slow axes have been made up to 6 W CW power level
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; 9.3 W; 970 nm; AlGaAs; CW wide aperture laser; InAlGaAs; cavity length; copper heatsink; field pattern; maximum power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971234
Filename
630327
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