Title :
Characteristic temperature of quantum dot laser
Author :
Asryan, L.V. ; Suris, R.A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
10/23/1997 12:00:00 AM
Abstract :
The characteristic temperature of a quantum dot laser. T0 , has been calculated for the first time considering carrier recombination in the optical confinement layer and violation of the charge neutrality in QDs. T0 is shown to fall off profoundly with increasing temperature, which is in line with the available experimental results
Keywords :
carrier mobility; electron-hole recombination; quantum well lasers; semiconductor quantum dots; carrier recombination; characteristic temperature; charge neutrality; optical confinement layer; quantum dot laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971286
