• DocumentCode
    1285193
  • Title

    50 GHz MIC amplifiers using AlGaAs/GaAs HBTs

  • Author

    Ogawa, K. ; Hashimoto, K. ; Uwano, T. ; Ota, Y.

  • Author_Institution
    Image Technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • Volume
    26
  • Issue
    25
  • fYear
    1990
  • Firstpage
    2134
  • Lastpage
    2135
  • Abstract
    Millimetre-wave heterojunction bipolar transistor (HBT) amplifiers have been developed for the first time in the form of alumina substrate MIC. These amplifiers were fabricated using AlGaAs/GaAs HBTs having an emitter size of 1*10 mu m2 with a maximum oscillation frequency of 111 GHz. A single-stage amplifier showed a gain of 3.4 dB with a P1dB of 9.6 dBm, and a two-stage amplifier showed a gain of 6.1 dB with a P1dB of 8 dBm at 50 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; 111 GHz; 3.4 dB; 50 GHz; 6.1 dB; Al 2O 3; AlGaAs-GaAs; HBTs; MIC amplifiers; MM-wave amplifier; frequency response; high frequency properties; high-frequency equivalent circuit model; maximum oscillation frequency; single-stage amplifier; two-stage amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901374
  • Filename
    59641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1285193