DocumentCode :
1285193
Title :
50 GHz MIC amplifiers using AlGaAs/GaAs HBTs
Author :
Ogawa, K. ; Hashimoto, K. ; Uwano, T. ; Ota, Y.
Author_Institution :
Image Technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
26
Issue :
25
fYear :
1990
Firstpage :
2134
Lastpage :
2135
Abstract :
Millimetre-wave heterojunction bipolar transistor (HBT) amplifiers have been developed for the first time in the form of alumina substrate MIC. These amplifiers were fabricated using AlGaAs/GaAs HBTs having an emitter size of 1*10 mu m2 with a maximum oscillation frequency of 111 GHz. A single-stage amplifier showed a gain of 3.4 dB with a P1dB of 9.6 dBm, and a two-stage amplifier showed a gain of 6.1 dB with a P1dB of 8 dBm at 50 GHz.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; 111 GHz; 3.4 dB; 50 GHz; 6.1 dB; Al 2O 3; AlGaAs-GaAs; HBTs; MIC amplifiers; MM-wave amplifier; frequency response; high frequency properties; high-frequency equivalent circuit model; maximum oscillation frequency; single-stage amplifier; two-stage amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901374
Filename :
59641
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1285193
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