• DocumentCode
    1285194
  • Title

    Intersubband electroluminescence in GaAs/AlGaAs quantum cascade structures [MBE]

  • Author

    Li, Y.B. ; Cockburn, J.W. ; Skolnick, M.S. ; Birkett, M.J. ; Duck, J.P. ; Grey, R. ; Hill, G.

  • Author_Institution
    Dept. of Phys., Sheffield Univ., UK
  • Volume
    33
  • Issue
    22
  • fYear
    1997
  • fDate
    10/23/1997 12:00:00 AM
  • Firstpage
    1874
  • Lastpage
    1875
  • Abstract
    The authors report the first observation of intersubband electroluminescence in GaAs/AlGaAs-based quantum cascade structures. A 100 Å Al0.15Ga0.85As/Al0.4Ga0.6As well is employed to bridge the individual active regions to enhance the overall quantum efficiency, thus greatly simplifying the design and growth of quantum cascade structures
  • Keywords
    III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 100 angstrom; GaAs-AlGaAs; III-V semiconductors; individual active regions; intersubband electroluminescence; overall quantum efficiency; quantum cascade laser structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971209
  • Filename
    630330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1285194