DocumentCode :
1285194
Title :
Intersubband electroluminescence in GaAs/AlGaAs quantum cascade structures [MBE]
Author :
Li, Y.B. ; Cockburn, J.W. ; Skolnick, M.S. ; Birkett, M.J. ; Duck, J.P. ; Grey, R. ; Hill, G.
Author_Institution :
Dept. of Phys., Sheffield Univ., UK
Volume :
33
Issue :
22
fYear :
1997
fDate :
10/23/1997 12:00:00 AM
Firstpage :
1874
Lastpage :
1875
Abstract :
The authors report the first observation of intersubband electroluminescence in GaAs/AlGaAs-based quantum cascade structures. A 100 Å Al0.15Ga0.85As/Al0.4Ga0.6As well is employed to bridge the individual active regions to enhance the overall quantum efficiency, thus greatly simplifying the design and growth of quantum cascade structures
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 100 angstrom; GaAs-AlGaAs; III-V semiconductors; individual active regions; intersubband electroluminescence; overall quantum efficiency; quantum cascade laser structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971209
Filename :
630330
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1285194
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