Title :
MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs(311)B substrate
Author :
Mizutani, A. ; Hatori, N. ; Nishiyama, N. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intell. Lab., Tokyo Inst. of Technol., Japan
fDate :
10/23/1997 12:00:00 AM
Abstract :
The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a GaAs (311)B substrate by metalorganic chemical-vapour deposition. A carbon auto-doping technique was used to avoid the difficulty of p-type doping (>1019 cm-3 ) AlAs for a distributed Bragg reflector. A low electrical resistance of p-type GaAs/AlAs DBRs on GaAs (311)B was obtained by using delta doping and compositional grading layers. The lowest threshold was 16mA at room temperature CW operation for a 50 μm diameter device. The threshold current density is 810 A/cm2 which is reasonably low for non-optimised experimental conditions. The polarisation state was stable
Keywords :
CVD coatings; III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor doping; semiconductor lasers; surface emitting lasers; 16 mA; 50 micron; GaAs; GaAs(311)B substrate; GaAs-AlAs:C; InGaAs-GaAs; InGaAs/GaAs vertical cavity surface emitting laser; MOCVD growth; carbon auto-doping; compositional grading layer; delta doping; distributed Bragg reflector; electrical resistance; p-type doping; polarisation state; room temperature CW operation; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971285
