Title :
Optically pumped, monolithic, all-epitaxial 1.56 μm vertical cavity surface emitting laser using Sb-based reflectors
Author :
Blum, O. ; Klem, J.F. ; Lear, K.L. ; Vawter, G.A. ; Kurtz, S.R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
10/23/1997 12:00:00 AM
Abstract :
The authors demonstrate, for the first time, 77 K CW operation of an optically pumped, monolithic, all-epitaxial vertical cavity laser, emitting at 1.56 μm. The laser incorporates 15 and 20 period Al0.12Ga0.88As0.56Sb0.44 -AlAs0.56Sb0.44 distributed Bragg reflectors for the top and bottom mirrors, respectively. The entire structure was grown in a single growth run by molecular beam epitaxy
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; molecular beam epitaxial growth; optical pumping; semiconductor epitaxial layers; semiconductor growth; surface emitting lasers; 1.56 micrometre; 77 K; Al0.12Ga0.88As0.56Sb0.44 -AlAs0.56Sb0.44; CW operation; III-V semiconductors; all-epitaxial vertical cavity laser; bottom mirror; distributed Bragg reflectors; molecular beam epitaxy; optical pumping; top mirror;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971284
