• DocumentCode
    1285208
  • Title

    Optically pumped, monolithic, all-epitaxial 1.56 μm vertical cavity surface emitting laser using Sb-based reflectors

  • Author

    Blum, O. ; Klem, J.F. ; Lear, K.L. ; Vawter, G.A. ; Kurtz, S.R.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    33
  • Issue
    22
  • fYear
    1997
  • fDate
    10/23/1997 12:00:00 AM
  • Firstpage
    1878
  • Lastpage
    1880
  • Abstract
    The authors demonstrate, for the first time, 77 K CW operation of an optically pumped, monolithic, all-epitaxial vertical cavity laser, emitting at 1.56 μm. The laser incorporates 15 and 20 period Al0.12Ga0.88As0.56Sb0.44 -AlAs0.56Sb0.44 distributed Bragg reflectors for the top and bottom mirrors, respectively. The entire structure was grown in a single growth run by molecular beam epitaxy
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; molecular beam epitaxial growth; optical pumping; semiconductor epitaxial layers; semiconductor growth; surface emitting lasers; 1.56 micrometre; 77 K; Al0.12Ga0.88As0.56Sb0.44 -AlAs0.56Sb0.44; CW operation; III-V semiconductors; all-epitaxial vertical cavity laser; bottom mirror; distributed Bragg reflectors; molecular beam epitaxy; optical pumping; top mirror;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971284
  • Filename
    630334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1285208