DocumentCode
1285218
Title
Very low threshold and high power CW operation in 1.55 μm gain-coupled DFB lasers with periodically etched quantum wells
Author
Talneau, A. ; Charil, J. ; Ougazzaden, A.
Author_Institution
CNET, Bagneux, France
Volume
33
Issue
22
fYear
1997
fDate
10/23/1997 12:00:00 AM
Firstpage
1881
Lastpage
1883
Abstract
The authors demonstrate extremely low threshold and high CW output power in 1.55 μm gain coupled DFB lasers. The structure is an MQW strain compensated active layer with first-order grating etched on the upper wells. The lowest thresholds of 2.5 mA at 20°C and 10 mA at 80°C are obtained using one HR facet coating. With an AR front facet, the CW output is increased up to 30 mW, while the threshold current remains <10 mA
Keywords
diffraction gratings; distributed feedback lasers; etching; laser modes; quantum well lasers; 1.55 micrometre; 10 mA; 2.5 mA; 20 degC; 40 mW; 80 degC; AR front facet; CW operation; HR facet coating; MQW strain compensated active layer; first-order grating; gain-coupled DFB lasers; periodically etched quantum wells; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971301
Filename
630336
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