Title :
Very low threshold and high power CW operation in 1.55 μm gain-coupled DFB lasers with periodically etched quantum wells
Author :
Talneau, A. ; Charil, J. ; Ougazzaden, A.
Author_Institution :
CNET, Bagneux, France
fDate :
10/23/1997 12:00:00 AM
Abstract :
The authors demonstrate extremely low threshold and high CW output power in 1.55 μm gain coupled DFB lasers. The structure is an MQW strain compensated active layer with first-order grating etched on the upper wells. The lowest thresholds of 2.5 mA at 20°C and 10 mA at 80°C are obtained using one HR facet coating. With an AR front facet, the CW output is increased up to 30 mW, while the threshold current remains <10 mA
Keywords :
diffraction gratings; distributed feedback lasers; etching; laser modes; quantum well lasers; 1.55 micrometre; 10 mA; 2.5 mA; 20 degC; 40 mW; 80 degC; AR front facet; CW operation; HR facet coating; MQW strain compensated active layer; first-order grating; gain-coupled DFB lasers; periodically etched quantum wells; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971301
