Title :
Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser
Author :
Chen, T.R. ; Eng, L. ; Zhao, B. ; Zhuang, Y.H. ; Sanders, S. ; Morkoc, H. ; Yariv, Amnon
Author_Institution :
Univ. of Electron. Sci. & Technol., China
fDate :
7/1/1990 12:00:00 AM
Abstract :
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductors; 0.75 mA; 14 mA; 2.4 mA; 7.6 GHz; InGaAs-GaAs; InGaAs-GaAs strained layer quantum-well laser; coated laser; device fabrication; hybrid beam epitaxy; liquid-phase epitaxy; low bias current; low threshold currents; material preparation; modulation bandwidth; single-quantum-well buried-heterostructure lasers; strained-layer diode lasers; submilliamp laser thresholds; uncoated laser; Bandwidth; Epitaxial growth; Gallium arsenide; Laser theory; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Pump lasers; Quantum well lasers; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
