DocumentCode
1285299
Title
Carbon and aluminium co-implantation for p-type doping in 6H-SiC
Author
Tone, K. ; Weiner, S.R. ; Zhao, J.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Volume
33
Issue
22
fYear
1997
fDate
10/23/1997 12:00:00 AM
Firstpage
1904
Lastpage
1906
Abstract
N-type 6H-SiC wafers have been implanted with C and Al, or Al only, at room temperature or 600°C for a comparative study with the emphasis on determining the dependence of the sheet resistivity and specific contact resistance of Al ohmic contacts on the concentration of implanted Al. The optimum implantation concentration is reported for the first time, along with clear evidence showing the advantage of C-Al co-implantation over Al single implantation
Keywords
aluminium; carbon; contact resistance; electrical resistivity; ion implantation; ohmic contacts; semiconductor materials; silicon compounds; 20 C; 600 C; SiC:C,Al; co-implantation; n-type 6H-SiC wafer; ohmic contact; p-type doping; sheet resistivity; specific contact resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971254
Filename
630359
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