Title :
Carbon and aluminium co-implantation for p-type doping in 6H-SiC
Author :
Tone, K. ; Weiner, S.R. ; Zhao, J.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
10/23/1997 12:00:00 AM
Abstract :
N-type 6H-SiC wafers have been implanted with C and Al, or Al only, at room temperature or 600°C for a comparative study with the emphasis on determining the dependence of the sheet resistivity and specific contact resistance of Al ohmic contacts on the concentration of implanted Al. The optimum implantation concentration is reported for the first time, along with clear evidence showing the advantage of C-Al co-implantation over Al single implantation
Keywords :
aluminium; carbon; contact resistance; electrical resistivity; ion implantation; ohmic contacts; semiconductor materials; silicon compounds; 20 C; 600 C; SiC:C,Al; co-implantation; n-type 6H-SiC wafer; ohmic contact; p-type doping; sheet resistivity; specific contact resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971254
