• DocumentCode
    1285303
  • Title

    GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

  • Author

    Chen, Zhi ; Mohammad, S.Noor

  • Author_Institution
    Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    33
  • Issue
    22
  • fYear
    1997
  • fDate
    10/23/1997 12:00:00 AM
  • Firstpage
    1906
  • Lastpage
    1907
  • Abstract
    A high quality Si3N4/Si/p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9×1010 eV 1 cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85 mS/mm has been fabricated using this ex-situ growth approach
  • Keywords
    III-V semiconductors; MIS structures; MISFET; gallium arsenide; molecular beam epitaxial growth; Si3N4-Si-GaAs; Si3N4/Si/p-GaAs MIS structure; conductance; depletion-mode MISFET; ex-situ growth; field effect transistor; interface trap density; metal-insulator-semiconductor structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971276
  • Filename
    630361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1285303