Title :
Single-voltage-operation pseudomorphic HEMT with low current dissipation for portable power applications
Author :
Lee, Jong-Lam ; Yoo, Hyung Mo ; Lee, Gi Young
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Inst. of Sci. & Technol., South Korea
fDate :
10/23/1997 12:00:00 AM
Abstract :
A low current dissipation pseudomorphic high electron mobility transistor with a single-planar-doped AlGaAs/InGaAs/GaAs heterojunction structure, operating at a 3.3 V single voltage supply, has been developed with a state-of-the-art performance. It exhibits a low operating current of 87.8 mA at an output power of 21.8 dBm with high power-added efficiency of 51.5% at a single voltage supply condition. This operating current value is the lowest among those reported for single voltage operation power devices for portable power applications
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; power HEMT; 3.3 V; 51.5 percent; 87.8 mA; AlGaAs-InGaAs-GaAs; current dissipation; output power; portable power application; power-added efficiency; pseudomorphic HEMT; single voltage operation; single-planar-doped heterojunction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971271
