DocumentCode :
1285579
Title :
Voltage Asymmetry of Spin-Transfer Torques
Author :
Datta, Deepanjan ; Behin-Aein, Behtash ; Datta, Supriyo ; Salahuddin, Sayeef
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
11
Issue :
2
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
261
Lastpage :
272
Abstract :
Experimentally, it is seen that the free magnetic layer of a spin torque transfer (STT) device experiences a larger in-plane torque when a negative (rather than positive) voltage is applied to the fixed layer. This is surprising because magnets do not have any intrinsic asymmetry. In this paper, we 1) provide a simple physical explanation, based on the polarization of fixed layer in the energy range of transport; 2) extend it to explain the asymmetric bias dependence of out-of-plane torque as observed in some of the experiments; and 3) propose an asymmetric STT structure that can lead to a significant difference in the in-plane torques exerted on two contacts, even if they are identical. This effect 3 has not been observed to our knowledge and if demonstrated can find important applications.
Keywords :
ferromagnetic materials; magnetic devices; magnetoelectronics; torque; asymmetric STT structure; asymmetric bias; fixed layer polarization; in-plane torque; out-of-plane torque; spin-transfer torque; voltage asymmetry; Frequency modulation; Insulators; Magnetic devices; Magnetic tunneling; Phase change materials; Torque; Asymmetry; in-plane torque; nonequilibrium Green’s function (NEGF); out-of-plane torque; spin polarization; spin torque transfer (STT);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2163147
Filename :
5966345
Link To Document :
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