• DocumentCode
    1285579
  • Title

    Voltage Asymmetry of Spin-Transfer Torques

  • Author

    Datta, Deepanjan ; Behin-Aein, Behtash ; Datta, Supriyo ; Salahuddin, Sayeef

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    11
  • Issue
    2
  • fYear
    2012
  • fDate
    3/1/2012 12:00:00 AM
  • Firstpage
    261
  • Lastpage
    272
  • Abstract
    Experimentally, it is seen that the free magnetic layer of a spin torque transfer (STT) device experiences a larger in-plane torque when a negative (rather than positive) voltage is applied to the fixed layer. This is surprising because magnets do not have any intrinsic asymmetry. In this paper, we 1) provide a simple physical explanation, based on the polarization of fixed layer in the energy range of transport; 2) extend it to explain the asymmetric bias dependence of out-of-plane torque as observed in some of the experiments; and 3) propose an asymmetric STT structure that can lead to a significant difference in the in-plane torques exerted on two contacts, even if they are identical. This effect 3 has not been observed to our knowledge and if demonstrated can find important applications.
  • Keywords
    ferromagnetic materials; magnetic devices; magnetoelectronics; torque; asymmetric STT structure; asymmetric bias; fixed layer polarization; in-plane torque; out-of-plane torque; spin-transfer torque; voltage asymmetry; Frequency modulation; Insulators; Magnetic devices; Magnetic tunneling; Phase change materials; Torque; Asymmetry; in-plane torque; nonequilibrium Green’s function (NEGF); out-of-plane torque; spin polarization; spin torque transfer (STT);
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2011.2163147
  • Filename
    5966345