Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

Author

Artioukov, I.A. ; Benware, B.R. ; Rocca, J.J. ; Forsythe, M. ; Uspenskii, Yu.A. ; Vinogradov, A.V.

Author_Institution

Lebedev (P.N.) Phys. Inst., Moscow, Russia

Volume

5

Issue

6

fYear

1999

Firstpage

1495

Lastpage

1501

Abstract

We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9 nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research

Keywords

X-ray lasers; high-speed optical techniques; laser transitions; measurement by laser beam; optical constants; optical materials; optical testing; reflectivity; 26.5 eV; 46.9 nm; GaAs; GaAsP; GaP; InP; Ir; Si; XUV optical constants; discharge pumped 46.9-nm table-top laser; high-repetition rate 46.9-nm laser; illumination source; materials research; reflectivity; reflectometry; ultrashort wavelength laser; Fault location; Gallium arsenide; Indium phosphide; Laser excitation; Lighting; Optical pumping; Pump lasers; Reflectivity; Reflectometry; Wavelength measurement;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.814989

Filename

814989