Title :
Small-junction-area GaInAs/InP pin photodiode with monolithic microlens
Author :
Makiuchi, M. ; Wada, O. ; Kumai, T. ; Hamaguchi, H. ; Aoki, O. ; Oikawa, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
1/21/1988 12:00:00 AM
Abstract :
Reports on a back-illuminated GaInAs/InP pin photodiode with a monolithic microlens fabricated by the authors. The photodiode has both an ultrabroad bandwidth of 18 GHz and a high quantum efficiency of about 84%. It achieves this by using a small pin junction area while maintaining a large fibre alignment tolerance by incorporating an InP microlens. The photodiode capacitance was 20 fF for a junction diameter of approximately 15 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; lenses; optical communication equipment; photodetectors; photodiodes; 15 micron; 18 GHz; 20 fF; 84 percent; GaInAs-InP; InP microlens; back-illuminated GaInAs/InP pin photodiode; frequency response; high quantum efficiency; junction diameter; large fibre alignment tolerance; monolithic microlens; photodiode capacitance; semiconductors; small junction area pin photodiode; small pin junction area; ultrabroad bandwidth;
Journal_Title :
Electronics Letters
