Title :
Hybrid Silicon Photonics for Optical Interconnects
Author :
Heck, Martijn J R ; Chen, Hui-Wen ; Fang, Alexander W. ; Koch, Brian R. ; Liang, Di ; Park, Hyundai ; Sysak, Matthew N. ; Bowers, John E.
Author_Institution :
Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. In this platform, a III/V layer is bonded to a fully processed silicon-on-insulator wafer. By changing the bandgap of the III/V quantum wells (QW), low-threshold-current lasers, high-speed modulators, and photodetectors can be fabricated operating at wavelengths of 1.55 μm. With a QW intermixing technology, these components can be integrated with each other and a complete high-speed optical interconnect can be realized on-chip. The hybrid silicon bonding and process technology are fully compatible with CMOS-processed wafers because high-temperature steps and contamination are avoided. Full wafer bonding is possible, allowing for low-cost and large-volume device fabrication.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; integrated optoelectronics; optical fabrication; optical interconnections; optical links; optical modulation; photodetectors; semiconductor quantum wells; silicon; silicon-on-insulator; wafer bonding; CMOS-processed wafers; III-V quantum wells; QW intermixing technology; contamination; full wafer bonding; high-speed modulators; hybrid silicon bonding; hybrid silicon photonic integration platform; large-volume device fabrication; low-threshold-current lasers; optical interconnects; optical links; photodetectors; semiconductor lasers; silicon-on-insulator wafer; wavelength 1.55 mum; CMOS technology; Contamination; Optical device fabrication; Optical fiber communication; Optical interconnections; Photodetectors; Photonic band gap; Quantum well lasers; Silicon on insulator technology; Wafer bonding; Integrated optoelectronics; optoelectronic devices; semiconductor lasers; silicon-on-insulator (SOI) technology;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2010.2051798
