p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb

Author

Luo, L.F. ; Longenbach, K.F. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

11

Issue

12

fYear

1990

Firstpage

567

Lastpage

569

Abstract

Operation of the first AlSbAs/GaSb p-channel modulation-doped field-effect transistor (MODFET) is reported. Devices with 1- mu m gate length exhibit transconductance of 30 and 110 mS/mm at room temperature and 80 K, with respective maximum drain current densities of 25 and 80 mA/mm. The low field Hall mobility and sheet carrier density of this modulation doped structure were 260 cm/sup 2//V-s and 1.8*10/sup 12/ cm/sup -2/ at room temperature and 1700 cm/sup 2//V-s and 1.4*10/sup 12/ cm/sup -2/ at 77 K. Calculations based on these results indicate that room-temperature transconductances of 200 mS/mm or greater could be achieved. This device can be integrated with an InAs n-channel HFET for complementary circuit applications.<>

Keywords

Hall effect; III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; 1 micron; 80 K; AlSb/sub 0.9/As/sub 0.1/-GaSb; III-V semiconductors; MODFET; complementary circuit; low field Hall mobility; maximum drain current densities; modulation-doped field-effect transistors; n-channel HFET; p-channel; sheet carrier density; transconductance; Charge carrier density; Circuits; Current density; Epitaxial layers; FETs; HEMTs; Hall effect; MODFETs; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63042

Filename

63042