Title :
Minority-carrier transport parameters in degenerate n-type silicon
Author :
Wang, Chih Hsin ; Neugroschel, Arnost
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Direct measurements of the minority-hole transport parameters in degenerate n-type silicon were done by analyzing transient photocurrent in the frequency domain. Minority-hole mobility is found to increase with doping for dopings larger than 4*10/sup 19/ cm/sup -3/. The ratio of minority-hole to majority-hole mobility is found to be about 2.8 at N/sub D/=7.2*10/sup 19/ cm/sup -3/. The measured lifetime shows a strongly Auger-dependent mechanism. The extracted Auger coefficient at 296 K is C/sub n/=2.22*10/sup -31/ cm/sup 6/-s/sup -1/, and is in agreement with that reported on other works. Self-consistent checking is used to validate the accuracy of the measured results.<>
Keywords :
Auger effect; carrier mobility; elemental semiconductors; heavily doped semiconductors; minority carriers; photoconductivity; silicon; 296 K; Auger-dependent mechanism; Si; accuracy; dopings; extracted Auger coefficient; frequency domain; majority-hole mobility; minority-hole mobility; minority-hole transport parameters; n-type semiconductors; transient photocurrent; Diodes; Doping; Frequency measurement; Microstrip; Optical attenuators; Optical pulses; Photoconductivity; Photodiodes; Silicon; Transient analysis;
Journal_Title :
Electron Device Letters, IEEE
