Minority-carrier transport parameters in degenerate n-type silicon

Author

Wang, Chih Hsin ; Neugroschel, Arnost

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

11

Issue

12

fYear

1990

Firstpage

576

Lastpage

578

Abstract

Direct measurements of the minority-hole transport parameters in degenerate n-type silicon were done by analyzing transient photocurrent in the frequency domain. Minority-hole mobility is found to increase with doping for dopings larger than 4*10/sup 19/ cm/sup -3/. The ratio of minority-hole to majority-hole mobility is found to be about 2.8 at N/sub D/=7.2*10/sup 19/ cm/sup -3/. The measured lifetime shows a strongly Auger-dependent mechanism. The extracted Auger coefficient at 296 K is C/sub n/=2.22*10/sup -31/ cm/sup 6/-s/sup -1/, and is in agreement with that reported on other works. Self-consistent checking is used to validate the accuracy of the measured results.<>

Keywords

Auger effect; carrier mobility; elemental semiconductors; heavily doped semiconductors; minority carriers; photoconductivity; silicon; 296 K; Auger-dependent mechanism; Si; accuracy; dopings; extracted Auger coefficient; frequency domain; majority-hole mobility; minority-hole mobility; minority-hole transport parameters; n-type semiconductors; transient photocurrent; Diodes; Doping; Frequency measurement; Microstrip; Optical attenuators; Optical pulses; Photoconductivity; Photodiodes; Silicon; Transient analysis;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63044

Filename

63044