Title :
A 20-Gs/s Track-and-Hold Amplifier in InP HBT Technology
Author :
Yamanaka, Shogo ; Sano, Kimikazu ; Murata, Koichi
Author_Institution :
NTT Network Innovation Labs., NTT Corp., Yokosuka, Japan
Abstract :
This paper presents a 20-Gs/s track-and-hold amplifier (THA) fabricated InP HBT technology. This THA is capable of operating under relatively high input voltages. The THA uses a fully differential architecture with a switched emitter-follower. To mitigate the pedestal error due to the feedthrough attenuation network, we added degeneration resistors in the feedthrough attenuation block. Measured total harmonic distortion is below -40 dB at low input frequencies, and -18 dB at frequency of 9.9 GHz.
Keywords :
III-V semiconductors; differential amplifiers; heterojunction bipolar transistors; indium compounds; sample and hold circuits; HBT technology; InP; differential architecture; frequency 9.9 GHz; switched emitter-follower; track-and-hold amplifier; Attenuation; CMOS technology; Capacitors; Frequency; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Optical amplifiers; Paper technology; Resistors; Silicon germanium; Voltage; Feedthrough; InP HBT; pedestal; track-and-hold amplifier (THA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2057174
