Title :
Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy
Author :
Tanbun-Ek, T. ; Logan, R.A. ; Temkin, H. ; Chu, S.N.G. ; Olsson, N.A. ; Sergent, A.M. ; Wecht, K.W.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
A report is presented on the growth and characterization of the first InGaAs-InP-based graded-index separate-confinement-heterostructure (GRIN-SCH) strained quantum-well lasers operating near 1.47 μm. The structure features linearly graded InGaAsP waveguide layers for both optical and carrier confinement in a very narrow, strained quantum-well layers. The excellent structural quality of the active and waveguide regions has been confirmed by transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) analysis results. Strained quantum-well lasers with well widths as narrow as 5-6 nm were fabricated with threshold current densities as low as 750 A/cm2. Buried-heterostructure lasers based on strained quantum-well active lasers exhibit threshold currents as low as 10-15 mA with quantum efficiency of 70-80%. With antireflection coating on one side of the sample, the laser shows threshold current of 35 mA with highest output power of 160 mW
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; gradient index optics; indium compounds; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; transmission electron microscope examination of materials; vapour phase epitaxial growth; 1.47 micron; 10 to 15 mA; 160 mW; 35 mA; 5 to 6 nm; GRIN-SCH laser; III-V semiconductor; InGaAs-InP; InGaAs-InP long wavelength strained layer quantum-well lasers; MOVPE; SIMS; TEM; active regions; antireflection coating; buried heterostructure lasers; carrier confinement; characterization; growth; metalorganic vapor phase epitaxy; optical confinement; secondary ion mass spectroscopy; structural quality; threshold current densities; transmission electron microscopy; waveguide regions; well widths; Carrier confinement; Coatings; Electron optics; Mass spectroscopy; Optical waveguides; Particle beam optics; Quantum well lasers; Threshold current; Transmission electron microscopy; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
