مرکز منطقه ای اطلاع رساني علوم و فناوري - Ni Electrode Unipolar Resistive RAM Performance Enhancement by <formula formulatype="inline"> <img src="/images/tex/19834.gif" alt="\\hbox {AlO}_{y}"> </formula> Incorporation Into <formula formulatype="inline"> <img src="/images/tex/18964.gif" alt="\\hbo

Title :

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\\hbox {AlO}_{y}$ Incorporation Into $\\hbo</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Tran, X.A. ; Yu, H.Y. ; Gao, B. ; Kang, J.F. ; Sun, X.W. ; Yeo, Y.C. ; Nguyen, B.Y. ; Li, M.-F.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>32</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>9</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2011</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1290</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1292</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this letter, a high-performance unipolar resistive random access memory with Ni electrode/ HfO<i>x</i>/AlO<i>y</i>/p<sup>+</sup>-Si substrate structure is reported. Compared with Ni/HfO<i>x</i>/p<sup>+</sup> -Si devices, a significant improvement in terms of switching parameters such as set/reset voltages, on/off resistance ratio, and resistance distribution is successfully demonstrated. It is believed that the stabilization of the conductive filament generation inside the switching HfO<i>x</i> film due to the AlO<i>y</i> incorporation plays a key role for the improved performance.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>aluminium compounds; dielectric materials; electrodes; elemental semiconductors; hafnium compounds; nickel; random-access storage; silicon; AlO<sub>y</sub>-HfO<sub>x</sub>-Si; Ni; conductive filament generation; electrode unipolar resistive RAM performance enhancement; on-off resistance ratio; random access memory; resistance distribution; set-reset voltages; Dielectrics; Electrodes; Nickel; Random access memory; Resistance; Silicon; Switches; <formula formulatype=$ $hbox{HfO}_{x}$; resistive random access memory (RRAM); unipolar resistive switching;