DocumentCode
1286275
Title
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs
Author
Tan, K.L. ; Dia, R.M. ; Streit, Dwight C. ; Lin, Tzuenshyan ; Trinh, Tien Q. ; Han, A.C. ; Liu, P.H. ; Chow, Pei-Ming D. ; Yen, H.C.
Author_Institution
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Volume
11
Issue
12
fYear
1990
Firstpage
585
Lastpage
587
Abstract
Fabrication of state-of-the-art W-band 0.1- mu m T-gate pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) is reported. This device achieved a noise figure of 2.1 dB with an associated gain of 6.3 dB at 93.5 GHz. The device has a maximum gain of 9.6 dB at 94 GHz, which extrapolates to an F/sub max/ of 290 GHz. This noise figure is claimed to be the lowest ever reported for HEMTs fabricated on GaAs substrates at this frequency range.<>
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 2.1 dB; 6.3 dB; 9.6 dB; 93.5 GHz; 94 GHz; GaAs; III-V semiconductors; InGaAs; T-gate pseudomorphic transistors; W-band; gain; high electron mobility transistors; noise figure; Electrons; Fabrication; Frequency; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; MODFETs; Noise figure; Superlattices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.63047
Filename
63047
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