Current oscillation mechanism on silicon epitaxial planar diode

Author

Deren Feng ; Ping Su ; Xiaojun Xu ; Fucun Han ; Jinpeng Zhu ; Lusheng Ge

Author_Institution

Inst. of Electr. & Inf., Anhui Univ. of Technol., Ma´anshan, China

fYear

2014

fDate

9-11 June 2014

Firstpage

1539

Lastpage

1542

Abstract

A small-scale experiment with a over-current silicon diode is presented and explained through a voltage-regulated switch model. The relaxation oscillation is proved through temporal behavior of the thin-beam drift in an infinite space. Moreover, the simulation made with nonlinear equation mathematical model, which is applicable to chaos,identified the experimental phenomena under certain initial normalized current values and parameters.

Keywords

elemental semiconductors; nonlinear equations; oscillations; semiconductor device models; semiconductor diodes; silicon; Si; current oscillation mechanism; infinite space; initial normalized current values; nonlinear equation mathematical model; overcurrent silicon diode; relaxation oscillation; silicon epitaxial planar diode; temporal behavior; thin-beam drift; voltage-regulated switch model; Cathodes; Electric potential; Mathematical model; Oscillators; Particle beams; Semiconductor diodes; Space charge; Relaxation oscillation; drift; particle aggregation; transit time; virtual cathode; voltage-controlled switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications (ICIEA), 2014 IEEE 9th Conference on

Conference_Location

Hangzhou

Print_ISBN

978-1-4799-4316-6

Type

conf

DOI

10.1109/ICIEA.2014.6931413

Filename

6931413