Title :
Current oscillation mechanism on silicon epitaxial planar diode
Author :
Deren Feng ; Ping Su ; Xiaojun Xu ; Fucun Han ; Jinpeng Zhu ; Lusheng Ge
Author_Institution :
Inst. of Electr. & Inf., Anhui Univ. of Technol., Ma´anshan, China
Abstract :
A small-scale experiment with a over-current silicon diode is presented and explained through a voltage-regulated switch model. The relaxation oscillation is proved through temporal behavior of the thin-beam drift in an infinite space. Moreover, the simulation made with nonlinear equation mathematical model, which is applicable to chaos,identified the experimental phenomena under certain initial normalized current values and parameters.
Keywords :
elemental semiconductors; nonlinear equations; oscillations; semiconductor device models; semiconductor diodes; silicon; Si; current oscillation mechanism; infinite space; initial normalized current values; nonlinear equation mathematical model; overcurrent silicon diode; relaxation oscillation; silicon epitaxial planar diode; temporal behavior; thin-beam drift; voltage-regulated switch model; Cathodes; Electric potential; Mathematical model; Oscillators; Particle beams; Semiconductor diodes; Space charge; Relaxation oscillation; drift; particle aggregation; transit time; virtual cathode; voltage-controlled switch;
Conference_Titel :
Industrial Electronics and Applications (ICIEA), 2014 IEEE 9th Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4799-4316-6
DOI :
10.1109/ICIEA.2014.6931413
