• DocumentCode
    1286686
  • Title

    11.5 GHz modulation bandwidth p-substrate GaInAsP buried crescent laser with high output power

  • Author

    Ng, Wilfred ; Craig, Richard ; Yen, H.W.

  • Author_Institution
    Hughes Res. Labs., Malibu, CA
  • Volume
    24
  • Issue
    1
  • fYear
    1988
  • fDate
    1/7/1988 12:00:00 AM
  • Firstpage
    43
  • Lastpage
    45
  • Abstract
    Low threshold (Ith≃20 mA) 1.3 μm GaInAsP p-substrate buried crescent lasers with output powers in excess of 30 mW/facet have been modulated into the X-band at 24°C. The chip capacitance deduced from scattering parameter (S 11) measurements was as low as 3 pF. A 3 dB direct modulation bandwidth of ~11.5 GHz has been observed at a bias current equal to 5 Ith
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 11.5 GHz; 20 mA; 24 C; 3 pF; 30 mW; GaInAsP-InP laser; X-band modulation; bias current; chip capacitance; microwave modulated laser; modulation bandwidth; output powers; p-substrate buried crescent lasers; scattering parameter; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1286686