Title :
11.5 GHz modulation bandwidth p-substrate GaInAsP buried crescent laser with high output power
Author :
Ng, Wilfred ; Craig, Richard ; Yen, H.W.
Author_Institution :
Hughes Res. Labs., Malibu, CA
fDate :
1/7/1988 12:00:00 AM
Abstract :
Low threshold (Ith≃20 mA) 1.3 μm GaInAsP p-substrate buried crescent lasers with output powers in excess of 30 mW/facet have been modulated into the X-band at 24°C. The chip capacitance deduced from scattering parameter (S 11) measurements was as low as 3 pF. A 3 dB direct modulation bandwidth of ~11.5 GHz has been observed at a bias current equal to 5 Ith
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 11.5 GHz; 20 mA; 24 C; 3 pF; 30 mW; GaInAsP-InP laser; X-band modulation; bias current; chip capacitance; microwave modulated laser; modulation bandwidth; output powers; p-substrate buried crescent lasers; scattering parameter; semiconductors;
Journal_Title :
Electronics Letters
