Title :
High-Gain SiC MESFETs Using Source-Connected Field Plates
Author :
Sriram, Saptharishi ; Hagleitner, Helmut ; Namishia, Dan ; Alcorn, Terry ; Smith, Thomas ; Pulz, Bill
Author_Institution :
Cree, Inc., Durham, NC, USA
Abstract :
We demonstrate for the first time improvement of radio-frequency (RF) gain of SiC MESFETs by using source-connected field plates (FPs). MESFETs fabricated with this approach show a new record maximum stable gain exceeding 15.7 dB at 3.1 GHz. This is 2.7 dB higher than the baseline devices without FP. RF power output greater than 4 W/mm was also achieved showing the potential of these devices for high-power operation.
Keywords :
microwave power transistors; power MESFET; silicon compounds; wide band gap semiconductors; SiC; frequency 3.1 GHz; gain 15.7 dB; high-gain MESFET fabrication; high-power operation; radio-frequency gain; source-connected field plates; MESFETs; SiC; source-connected field plates (FPs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2027211
