Silicon photonics for next generation FDM/FDMA PON

Author

Charbonnier, B. ; Menezo, Sylvie ; O´Brien, P. ; Lebreton, Aurélien ; Fedeli, J.M. ; Ben Bakir, B.

Author_Institution

France Telecom R&D, Lannion, France

Volume

4

Issue

9

fYear

2012

Abstract

Frequency division multiplexing/frequency division multi-access passive optical networks are shown to provide a possible solution in terms of performance, manufacturability and cost to the specification of the second next generation passive optical access systems (NG-PON2). The upstream capacity of a particular implementation is experimentally evaluated, and the implementation of the required optical network unit in silicon photonics is analyzed, as this complementary-metal-oxide-semiconductor-compatible technology is well suited for mass market applications.

Keywords

CMOS integrated circuits; channel capacity; elemental semiconductors; frequency division multiple access; frequency division multiplexing; passive optical networks; silicon; FDMA; PON; Si; complementary-metal-oxide-semiconductor-compatible technology; frequency division multiple access; frequency division multiplexing; next generation passive optical access systems; passive optical networks; photonics; upstream capacity; Bit error rate; Optical attenuators; Optical modulation; Optical network units; Passive optical networks; Radio frequency; Frequency division multi-access; Optical fiber networks; Optical transmitters; Silicon-on-insulator technology;

fLanguage

English

Journal_Title

Optical Communications and Networking, IEEE/OSA Journal of

Publisher

ieee

ISSN

1943-0620

Type

jour

DOI

10.1364/JOCN.4.000A29

Filename

6305038