The effect of electronic feedback on semiconductor lasers

Author

Sharaf, Khaled ; Ibrahim, Magdy M.

Author_Institution

Dept. of Electron. & Comput. Eng., Ain Shams Univ., Cairo, Egypt

Volume

26

Issue

8

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1347

Lastpage

1352

Abstract

Negative electronic feedback (EFB) has a strong effect on the performance of a bistable laser diode amplifier and on injection-locked lasers. Negative EFB drastically reduces the switching-up input power level and the hysteresis in the input-output power characteristic and in the tuning curves of the bistable laser amplifier. Furthermore, negative EFB leads to a reduction in the time delay associated with optical switching in diode laser amplifiers. This provides a means of enhancing the versatility of the proposed system in some potential applications. For an injected-locked laser, negative EFB achieves a broadening in the locking bandwidth and its dynamically stable region

Keywords

feedback; laser theory; laser tuning; optical bistability; semiconductor device models; semiconductor junction lasers; bistable laser diode amplifier; hysteresis; injection-locked lasers; input-output power characteristic; locking bandwidth broadening; negative electronic feedback; optical switching; performance; semiconductor lasers; switching-up input power level; time delay; tuning curves; Diode lasers; Hysteresis; Laser feedback; Laser tuning; Negative feedback; Optical amplifiers; Optical tuning; Power semiconductor switches; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.59681

Filename

59681