DocumentCode :
1286820
Title :
The effect of electronic feedback on semiconductor lasers
Author :
Sharaf, Khaled ; Ibrahim, Magdy M.
Author_Institution :
Dept. of Electron. & Comput. Eng., Ain Shams Univ., Cairo, Egypt
Volume :
26
Issue :
8
fYear :
1990
fDate :
8/1/1990 12:00:00 AM
Firstpage :
1347
Lastpage :
1352
Abstract :
Negative electronic feedback (EFB) has a strong effect on the performance of a bistable laser diode amplifier and on injection-locked lasers. Negative EFB drastically reduces the switching-up input power level and the hysteresis in the input-output power characteristic and in the tuning curves of the bistable laser amplifier. Furthermore, negative EFB leads to a reduction in the time delay associated with optical switching in diode laser amplifiers. This provides a means of enhancing the versatility of the proposed system in some potential applications. For an injected-locked laser, negative EFB achieves a broadening in the locking bandwidth and its dynamically stable region
Keywords :
feedback; laser theory; laser tuning; optical bistability; semiconductor device models; semiconductor junction lasers; bistable laser diode amplifier; hysteresis; injection-locked lasers; input-output power characteristic; locking bandwidth broadening; negative electronic feedback; optical switching; performance; semiconductor lasers; switching-up input power level; time delay; tuning curves; Diode lasers; Hysteresis; Laser feedback; Laser tuning; Negative feedback; Optical amplifiers; Optical tuning; Power semiconductor switches; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.59681
Filename :
59681
Link To Document :
بازگشت