DocumentCode :
1286883
Title :
MILC-TFT With High- 
Dielectrics for One-Time-Programmable Memory Application
Author :
Chiang, Tsung-Yu ; Ma, Ming-Wen ; Wu, Yi-Hong ; Kuo, Po-Yi ; Wang, Kuan-Ti ; Liao, Chia-Chun ; Yeh, Chi-Ruei ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
30
Issue :
9
fYear :
2009
Firstpage :
954
Lastpage :
956
Abstract :
In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ~ -0.78 V, excellent subthreshold swing ~ 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.
Keywords :
crystallisation; high-k dielectric thin films; leakage currents; semiconductor storage; thin film circuits; thin film transistors; MILC-TFT; gate induced gate leakage current; high-k dielectrics; high-kappa dielectrics; metal induced lateral crystallization; one-time-programmable memory; thin-film transistor; Gate-induced drain leakage (GIDL); metal-induced lateral crystallization (MILC); one-time programmable (OTP); thin-film transistor (TFT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2027035
Filename :
5191103
Link To Document :
