Title :
Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors
Author :
Takechi, Kazushige ; Nakata, Mitsuru ; Eguchi, Toshimasa ; Yamaguchi, Hirotaka ; Kaneko, Shin
Author_Institution :
NEC LCD Technol., Ltd., Kawasaki, Japan
Abstract :
Our experimental results for amorphous InGaZnO4 and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.
Keywords :
II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO4; ZnO; amorphous semiconductors; exponential tail-state distribution; gate-voltage-dependent transconductance; polycrystalline thin film transistors; zinc-based oxide; Amorphous materials; Annealing; Crystallization; Exponential distribution; National electric code; Plasma temperature; Probability distribution; Silicon; Thin film transistors; Zinc oxide; Amorphous silicon; oxide semiconductor; polycrystalline silicon (pc-Si); structural disorder; tail-state distribution; thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2026392
