Title :
Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor
Author :
Xingbao Zhou ; Shouli Zhou ; Hao Wen ; Hongliang Ren ; Guiyong Huang ; Jun Xu ; Yuhua Wang
Author_Institution :
Coll. of Inf. Eng., Zhejiang Univ. of Technol., Hangzhou, China
Abstract :
The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity ΔEC and a minimum base bandgap energy EG among the entire composition range of InxGa1-xAs1-ySby material lattice matched to InP. A low Emitter-Base turn on voltage VBE and a low collector offset voltage VCE, as well as a high current gain cut-off frequency, are achieved.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; technology CAD (electronics); InP-In0.24Ga0.76As0.73Sb0.27-In0.53Ga0.47As; TCAD SILVACO device simulator; double heterojunction bipolar transistor; electrical characteristics; emitter-base conduction band discontinuity; energy balance transport model; high current gain cut-off frequency; low collector offset voltage; low emitter-base turn on voltage; minimum base bandgap energy; Doping; Double heterojunction bipolar transistors; Indium phosphide; Mathematical model; Photonic band gap; Semiconductor process modeling; Double heterojunction bipolar transistors (DHBTs); InP/In0.24Ga0.76As0.73Sb0.27; electrical characteristics;
Conference_Titel :
Industrial Electronics and Applications (ICIEA), 2014 IEEE 9th Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4799-4316-6
DOI :
10.1109/ICIEA.2014.6931447
