Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays

Author

Robadey, J. ; Marti, U. ; Miles, R.O. ; Glick, Madeleine ; Filipowitz, F. ; Achtenhagen, M. ; Martin, D. ; Morier-Genoud, F. ; Silva, P.C. ; Magnenat, Y. ; Jouneau, P.-H. ; Bobard, F. ; Reinhart, F.K.

Author_Institution

Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland

Volume

9

Issue

1

fYear

1997

Firstpage

5

Lastpage

7

Abstract

Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented. Threshold current densities in broad area lasers were measured to be as low as 160 A/cm². The side-mode suppression ratio at twice threshold is 35 dB. A 4-μm rib waveguide device has a threshold of 14 mA. The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.

Keywords

III-V semiconductors; current density; distributed feedback lasers; etching; gallium arsenide; holographic gratings; indium compounds; optical fabrication; quantum well lasers; rib waveguides; semiconductor laser arrays; semiconductor quantum wires; waveguide lasers; 14 mA; 4 mum; 77 K; 923 nm; InGaAs quantum-wire arrays; InGaAs-GaAs; broad area lasers; current-injected InGaAs-GaAs quantum-wire gain-coupled DFB laser; deep UV holography; distributed feedback gain-coupled lasers; fabrication; patterning process; rib waveguide device; second-order DFB grating; side-mode suppression ratio; threshold current densities; wet-chemical etching; Area measurement; Current measurement; Density measurement; Distributed feedback devices; Indium gallium arsenide; Laser feedback; Optical arrays; Optical device fabrication; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.554152

Filename

554152