Title :
Low-threshold and high-temperature operation of InGaAlAs-InP lasers
Author :
Chen, T.R. ; Chen, P.C. ; Ungar, J. ; Newkirk, M.A. ; Oh, S. ; Bar-Chaim, N.
Author_Institution :
Ortel Corp., Alhambra, CA, USA
Abstract :
InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T/sub 0/ values as high as 120 K have been measured. These values are the best reported thus far for this material system.
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 120 K; 1300 nm; 3.9 mA; InGaAlAs-InP; InGaAlAs-InP lasers; InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes; high-temperature operation; low-threshold operation; threshold currents; Chemical lasers; Coatings; Diode lasers; Heat sinks; Optical pulses; Reflectivity; Substrates; Temperature distribution; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
