Low-threshold loss-coupled laser diode by new grating fabrication technique

Author

Chongdae Park ; Jeong Soo Kim ; Dae Kon Oh ; Dong Hoon Jang ; Chan Yong Park ; Joo Heon Ahn ; Hyoung Moon Kim ; Heung Ro Choo ; Hongman Kim ; Kwang Eui Pyun

Author_Institution

Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

9

Issue

1

fYear

1997

Firstpage

22

Lastpage

24

Abstract

We introduce a novel fabrication method to make InGaAs absorptive first-order grating for loss-coupled distributed feedback laser diode (DFB-LD) using reactive ion etching. By this technique, it is possible to control duty rate of the first-order grating. A very-low-threshold current of 6 mA was obtained from our loss-coupled LD at the wavelength of 1.547 μm, which was unusually high for a loss-coupled LD because of the excessive light absorption. In addition to the low-threshold current, it shows high SMSR and longitudinal single-mode yield as high as 50 dB and 90%, respectively.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; optical couplers; optical fabrication; optical losses; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.547 mum; 6 mA; InGaAs; InGaAs absorptive first-order grating; duty rate; excessive light absorption; fabrication method; first-order grating; grating fabrication technique; longitudinal single-mode yield; loss-coupled LD; loss-coupled distributed feedback laser diode; low-threshold current; low-threshold loss-coupled laser diode; reactive ion etching; very-low-threshold current; Absorption; Chirp; Diode lasers; Etching; Gratings; Indium gallium arsenide; Laser feedback; Optical coupling; Optical device fabrication; Silicon compounds;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.554158

Filename

554158