Title :
Optimized Load Modulation Network for Doherty Power Amplifier Performance Enhancement
Author :
Chen, Shichang ; Xue, Quan
Author_Institution :
State Key Labs. of Millimeter Waves, City Univ. of Hong Kong, Kowloon Tong, China
Abstract :
In this paper, a new load modulation network (LMN) is proposed for the Doherty power amplifier (DPA). By adjusting the transmission line characteristic impedances in the LMN, efficiency degradation due to the incomplete load modulation caused by the current unbalance between sub-amplifiers can be alleviated. Comprehensive theoretical analysis is conducted to investigate the impact of imperfect current profile on the overall efficiency and give rise to the judicious solution. To validate the new theory, two DPA prototypes based on GaAs pseudomorphic HEMTs are implemented for comparative purposes. Measurement results show that 8% and 13% greater power-added efficiency values are achieved at saturation and 6-dB output back-off point with the proposed method when compared with that of the conventional one. Additionally, the output 1-dB compression point is also improved by 2.9 dB. In particular, to the best of the authors´ knowledge, this work provides a solution to address the inherent lower current driving ability for the peaking amplifier directly at the output part of a single-input DPA.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; high-frequency transmission lines; power amplifiers; DPA prototypes; Doherty power amplifier performance enhancement; GaAs; LMN; current unbalance; efficiency 13 percent; efficiency 8 percent; imperfect current profile; optimized load modulation network; pseudomorphic HEMT; single-input DPA; Impedance; Load modeling; Modulation; Peak to average power ratio; Power generation; Power transmission lines; Transistors; Doherty amplifier; load modulation network (LMN); peak-to-average power ratio (PAPR); power amplifier (PA); power-added efficiency (PAE);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2215625