Title :
Thermal analysis of high-power modules
Author :
Van Godbold, C. ; Sankaran, V. Anand ; Hudgins, Jerry L.
Author_Institution :
Michigan Univ., Dearborn, MI, USA
fDate :
1/1/1997 12:00:00 AM
Abstract :
A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor-stack types: direct bond copper (DEC), thick-film printed substrate, and insulated metal substrate (IMS). DEC and thick film are thermally superior to IMS, but IMS shows potential. In addition, the effect of case-to-sink interface conductivity on heat flow is studied and shown to be of extreme importance in a proper thermal simulation
Keywords :
finite element analysis; heat transfer; power integrated circuits; power transistors; substrates; thermal analysis; case-to-sink interface conductivity; direct bond copper; heat flow studies; high-power modules; insulated metal substrate; thermal analysis; thermal simulation; thick-film printed substrate; transistor stack type; Electromagnetic interference; Electronic packaging thermal management; Inductance; Land surface temperature; Minimization; Multichip modules; Semiconductor device packaging; Switches; Switching circuits; Thermal resistance;
Journal_Title :
Power Electronics, IEEE Transactions on
