Title :
Lead-free (Bi0.5Na0.5)TiO3-based thin films by the pulsed laser deposition process
Author :
Hejazi, Mehdi ; Jadidian, Bahram ; Safari, Ahmad
Author_Institution :
Dept. of Mater. Sci. & Eng., Rutgers, State Univ. of New Jersey, Piscataway, NJ, USA
fDate :
9/1/2012 12:00:00 AM
Abstract :
We have studied the effect of deposition parameters on the microstructure, crystallinity, and ferroelectric properties of 0.88(Bi0.5Na0.5)TiO3-0.08(Bi0.5K0.5)TiO3-0.04BaTiO3 thin films grown on SrRuO3-coated SrTiO3 substrates by pulsed laser deposition. The parameters studied were the repetition rates, substrate temperatures, oxygen pressures, and laser energies. It was realized that the films prepared at 800°C, 10 Hz, 400 mtorr, and 1.2 J·cm-2 exhibited the highest ferroelectric properties. The measured remanent polarization, dielectric constant at 1 kHz, and coercive field for this film were about 30 μC·cm-2, 645, and 85 kV·cm-1, respectively. Increasing the oxygen pressure during deposition from 200 to 400 mtorr improved the crystallinity, microstructure, dielectric constant, and polarization of the films. The leakage current and dielectric loss were suppressed at 400 mtorr because of the lower concentration of oxygen vacancies and disappearing pinholes and surface undulations in the film deposited at this pressure.
Keywords :
barium compounds; bismuth compounds; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric coercive field; ferroelectric thin films; leakage currents; permittivity; potassium compounds; pulsed laser deposition; sodium compounds; vacancies (crystal); (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-BaTiO3; SrRuO3-coated SrTiO3 substrates; SrRuO3-SrTiO3; coercive field; crystallinity; dielectric constant; dielectric loss; dielectric polarization; disappearing pinholes; ferroelectric properties; ferroelectric thin films; frequency 1 kHz; frequency 10 Hz; hysteresis loops; laser energy; leakage current; microstructure; oxygen pressures; oxygen vacancies; pressure 400 mtorr; pulsed laser deposition; remanent polarization; repetition rates; substrate temperature; surface undulation; temperature 800 degC; Films; Microstructure; Plasma temperature; Pulsed laser deposition; Substrates; Surface morphology; Surface treatment;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2012.2396