DocumentCode :
1287281
Title :
A new DC Drain-Current-Conductance method (DCCM) for the characterization of effective mobility (μ/sub eff/) and series resistances (R/sub s/, R/sub d/) of fresh and hot-carrier stressed graded junction MOSFETs
Author :
Lou, C.L. ; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
Volume :
18
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
327
Lastpage :
329
Abstract :
A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (u/sub eff/) and series resistances (R/sub s/ and R/sub d/) of graded junction n- and p-channel MOSFETs. This technique is found to be accurate and effective for devices with differing channel lengths and also for devices after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into the damage mechanisms of hot-carrier stressed graded junction nMOSFETs and are usable in circuit and reliability simulation. This technique is especially useful for the optimization of hot-carrier resistant structures of submicrometer MOSFETs.
Keywords :
MOSFET; carrier mobility; circuit analysis computing; electric admittance measurement; electric resistance measurement; hot carriers; semiconductor device reliability; semiconductor device testing; DC drain-current-conductance method; channel length; circuit simulation; damage mechanisms; effective mobility; gate bias dependent effective channel mobility; graded junction MOSFETs; hot-carrier resistant structure optimization; hot-carrier stressing; n-channel MOSFET; nonuniform hot-carrier degradation; p-channel MOSFET; reliability simulation; series resistances; submicrometer MOSFETs; Circuit simulation; Degradation; Failure analysis; Hot carrier effects; Hot carriers; Integrated circuit reliability; MOSFET circuits; Reliability engineering; Semiconductor device manufacture; Stress;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.596926
Filename :
596926
Link To Document :
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