DocumentCode :
1287288
Title :
Dynamic internal testing of CMOS circuits using hot luminescence
Author :
Kash, J.A. ; Tsang, J.C.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
18
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
330
Lastpage :
332
Abstract :
Subnanosecond pulses of hot electron luminescence are shown to be generated coincident with logic state switching of individual devices in CMOS circuits. These pulses are used to directly observe 90 ps gate delays in a ring oscillator as well as the logic switching and gate delays of a counter. By use of a detector with both space- and time-resolution, the dynamics of all the gates of the circuit are simultaneously measured. This noninvasive technique can be extended to smaller device size, as well as probing from the backside of the wafer. The optical emission may provide an alternative to electron beam testing for measuring the dynamics of high-speed CMOS circuits.
Keywords :
CMOS integrated circuits; delays; dynamic testing; electroluminescence; hot carriers; integrated circuit testing; time resolved spectra; transient analysis; 0.6 mum; CMOS circuits; counter; dynamic internal testing; effective gate length; gate delays; high-speed CMOS circuit dynamics; hot electron luminescence; logic state switching; noninvasive technique; optical emission; ring oscillator; simultaneous measurement; space-resolution; subnanosecond pulses; time-resolution; wafer backside probing; CMOS logic circuits; Circuit testing; Delay; Electrons; Logic devices; Luminescence; Pulse circuits; Pulse generation; Ring oscillators; Switching circuits;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.596927
Filename :
596927
Link To Document :
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