Innovative localized lifetime control in high-speed IGBTs

Author

Saggio, M. ; Raineri, V. ; Letor, R. ; Frisina, F.

Author_Institution

ST Microelectron., Catania, Italy

Volume

18

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

333

Lastpage

335

Abstract

An innovative method to control carrier lifetime locally and efficiently in Insulated Gate Bipolar Transistors (IGBTs) is presented. It is based on the formation of void layers by low-energy and high-dose He implants and annealing. Voids introduce two well-defined midgap trap levels in silicon. HFIELDS simulations demonstrate the increase of surface hole concentration when a well localized recombination region is introduced in the buffer layer. High-speed IGBTs were fabricated both with voids in the buffer layer or with unlocalized recombination centres. Devices with localized bandgap centres show a lower on-resistance with a fast turn-off behavior.

Keywords

annealing; carrier lifetime; insulated gate bipolar transistors; ion implantation; voids (solid); HFIELDS simulation; He implantation; Si; annealing; buffer layer; high-speed IGBT; insulated gate bipolar transistor; localized carrier lifetime control; midgap trap levels; recombination; silicon; surface hole concentration; void layer; Annealing; Buffer layers; Charge carrier lifetime; Electrons; Insulated gate bipolar transistors; Insulation; Protons; Silicon; Spontaneous emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.596928

Filename

596928