• DocumentCode
    1287303
  • Title

    A new three-terminal thyristor-based high-power switching configuration with high-voltage current saturation

  • Author

    Ajit, J.S.

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA, USA
  • Volume
    18
  • Issue
    7
  • fYear
    1997
  • fDate
    7/1/1997 12:00:00 AM
  • Firstpage
    336
  • Lastpage
    339
  • Abstract
    A new high-voltage power switch configuration having thyristor based on-state current conduction together with high-voltage current saturation characteristics is described. Current saturation is obtained in the new thyristor structure by diverting part of the base current at a predesigned current level to bring the NPN and PNP transistors comprising the thyristor out of their regeneratively-coupled conduction mode. The concept has been experimentally verified by fabricating 1200 V, 175 A devices.
  • Keywords
    MOS-controlled thyristors; power semiconductor switches; 1200 V; 175 A; NPN transistor; PNP transistor; high-power switch; high-voltage current saturation; on-state current conduction; three-terminal thyristor; Cathodes; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Physics; Silicon on insulator technology; Switching circuits; Threshold voltage; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.596929
  • Filename
    596929