DocumentCode
1287323
Title
Nitrogen-doped poly spacer local oxidation
Author
Huang, S.-F. ; Griffin, P.B. ; Rissman, P. ; Plummer, J.D.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
Volume
18
Issue
7
fYear
1997
fDate
7/1/1997 12:00:00 AM
Firstpage
346
Lastpage
348
Abstract
A novel isolation technique which consists of a modified local oxidation of silicon (LOCOS) process with a nitrogen-doped amorphous-Si spacer has been developed. Nitrogen doping of amorphous-Si reduces its oxide growth rate. This isolation process shows the least encroachment, smallest maximum stress, and a deeper field oxide recess as compared to standard LOCOS or poly spacer LOCOS. The oxidation of nitrogen-doped amorphous-Si also has been simulated by an equivalent stacked layer.
Keywords
elemental semiconductors; isolation technology; nitrogen; oxidation; silicon; LOCOS; Si:N; isolation technology; local oxidation of silicon; nitrogen-doped amorphous silicon spacer; nitrogen-doped polysilicon spacer; stacked layer; Circuit simulation; Doping; Etching; Isolation technology; Laboratories; Nitrogen; Oxidation; Silicon; Stress; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.596932
Filename
596932
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