High-speed InGaP/GaAs HBTs using a simple collector undercut technique to reduce base-collector capacitance

Author

Chen, W.L. ; Chau, H.F. ; Tutt, M. ; Ho, M.C. ; Kim, T.S. ; Henderson, T.

Author_Institution

Corp. R&D Syst. Components Lab., Texas Instrum. Inc., Dallas, TX, USA

Volume

18

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

355

Lastpage

357

Abstract

High-speed InGaP/GaAs HBTs were fabricated using a simple collector undercut (CU) technique to physically remove the collector material underneath the extrinsic base region by selective etching for reducing base-collector capacitance (C/sub BC/). The best HBTs achieved a f/sub T/ of 80 GHz and a f/sub max/ (MSG/MAG) of 171 GHz. To our knowledge, this is the highest f/sub max/ (MSG/MAG) ever reported for the InGaP/GaAs HBTs. Compared to the HBTs without CUs, the CU HBTs showed a factor of 1.38 times improvement in the highest achievable f/sub max/ (MSG/MAG) due to the significant reduction of the C/sub BC/.

Keywords

III-V semiconductors; capacitance; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor technology; 171 GHz; 80 GHz; InGaP-GaAs; base-collector capacitance; collector undercut; fabrication; high-speed HBT; selective etching; Capacitance; Dielectric constant; Dielectric materials; Gallium arsenide; Heterojunction bipolar transistors; Inorganic materials; Material properties; Materials reliability; Signal processing; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.596935

Filename

596935