DocumentCode :
1287410
Title :
Effect of manganese and vanadium valences on microstructures and reliability of BaTiO3-based multi-layer ceramic capacitors
Author :
Natsui, H. ; Shibahara, T. ; Yonezawa, Yoshiyuki ; Kido, O.
Author_Institution :
Corp. R&D Group, TDK Corp., Narita, Japan
Volume :
59
Issue :
9
fYear :
2012
fDate :
9/1/2012 12:00:00 AM
Firstpage :
1996
Lastpage :
2003
Abstract :
The valences of manganese and vanadium oxides in multi-layer ceramic capacitors (MLCCs), sintered under a reducing atmosphere, were investigated using electron paramagnetic resonance; insulation resistance degradation was analyzed using impedance spectroscopy in highly accelerated lifetime tests to clarify the influences of manganese and vanadium on both the electrical properties and microstructure of MLCCs. The Mn2+ was stable in the reducing-atmosphere-sintered MLCCs and formed a grain boundary. Vanadium mitigated insulation resistance degradation and increased the reliability of the MLCCs. Although V4+ was detected in MLCCs that had 0.20 mol% and 0.30 mol% of added vanadium, the electrical properties were dependent upon other ions, e.g., V3+ or V5+. All vanadium ions except for V4+ decreased the insulation resistance of ceramic/electrode interface. This is because vanadium reduces electric field concentration at the ceramic/electrode interface and delays the onset of oxygen vacancy migration in the early stages of a highly accelerated lifetime test.
Keywords :
barium compounds; ceramic capacitors; grain boundaries; interface structure; life testing; manganese; paramagnetic resonance; reliability theory; sintering; vanadium; BaTiO3; BaTiO3-based multilayer ceramic capacitors; Mn2+; V4+; V4+ detection; accelerated lifetime tests; ceramic-electrode interface; electric field concentration; electrical properties; electron paramagnetic resonance; grain boundary; impedance spectroscopy; manganese valences; microstructures; oxygen vacancy migration; reducing-atmosphere-sintered MLCC; reliability; sintering; vanadium mitigated insulation resistance degradation; vanadium valences; Capacitors; Ceramics; Degradation; Grain boundaries; Manganese; Resistance;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2012.2419
Filename :
6306021
Link To Document :
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