• DocumentCode
    1287577
  • Title

    Three-Phase Current-Injection Rectifiers: Competitive Topologies for Power Factor Correction

  • Author

    Kanaan, Hadi Y. ; Al-Haddad, Kamal

  • Author_Institution
    St.-Joseph Univ., Beirut, Lebanon
  • Volume
    6
  • Issue
    3
  • fYear
    2012
  • Firstpage
    24
  • Lastpage
    40
  • Abstract
    Three-phase current-injection rectifiers have been recently ranked among the most attractive AC-to-DC energy conversion topologies required in medium- and high-power applications. Their increasing popularity is mainly due to their structural and control simplicity and their high performance in terms of input power factor, current distortion, energy efficiency, and dc voltage regulation. They are actually considered solid competitors of six-switch rectifiers and the three-phase/switch/level (Vienna) topologies in applications where bidirectional power flow is not requested. The main benefit of the current-injection rectifier remains in the reduced number of high- frequency power semiconductors [two high- frequency insulated gate bipolar transistors (IGBTs) and three fast diodes, compared to six high-frequency IGBTs and six fast diodes for the six-switch rectifier, and three high-frequency IGBTs and 18 fast diodes for the three-phase/switch/level rectifier], making it more efficient and reliable.
  • Keywords
    AC-DC power convertors; energy conservation; insulated gate bipolar transistors; power factor; power semiconductor diodes; power semiconductor switches; rectifying circuits; switchgear; voltage control; AC-DC energy conversion topology; DC voltage regulation; IGBT; bidirectional power flow; current distortion; diode; energy efficiency; high-frequency insulated gate bipolar transistor; high-frequency power semiconductor; high-power application; input power factor; medium-power application; six-switch rectifier; three-phase current-injection rectifier; three-phase-switch-level Vienna topology; Energy conversion; Energy efficiency; Insulated gate bipolar transistors; Reactive power; Rectifiers; Semiconductor diodes; Topology;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4529
  • Type

    jour

  • DOI
    10.1109/MIE.2012.2207817
  • Filename
    6306054